Electronics
Electronic grade polycrystalline silicon detection
Electronic grade polycrystalline silicon detection
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Electronic grade polycrystalline silicon detection

Scope

This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate, and purchase order (or contract) content for polycrystalline silicon This standard is applicable to polycrystalline silicon prepared from chlorosilane and silane

Normative references

The following documents are essential for the application of this document.

. For dated references, only the dated version applies to this document. For undated references, the latest version (including all modification orders) applies to this document

GB/T 1550 Test Method for Conductive Types of Non intrinsic Semiconductor Materials

GB/T 1551 Method for Determining the Resistivity of Silicon Single Crystals

GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductive Attenuation Method

GB/T 1557 Infrared Absorption Measurement Method for Interstitial Oxygen Content in Silicon Crystals

GB/T 1558 Method for Measuring the Content of Substituted Carbon Atoms in Silicon by Infrared Absorption

GB/T 4059 Method for Testing Phosphorus in Silicon Polycrystalline Atmospheres

GB/T 4060 Silicon Polycrystalline Testing Method for Boron Based on Vacuum Zone Melting of Crystals

GB/T 4061 Method for Chemical Corrosion Testing of Cross Section Interlayer of Silicon Polycrystals

GB/T 13389 Conversion Procedure for Resistivity and Dopant Concentration of Boron Doped Phosphorus Doped Arsenic Doped Silicon Single Crystals

GB/T 14264 Terminology of Semiconductor Materials

GB/T 24574 Photoluminescence Testing Method for V Group Impurities in Silicon Single Crystals

GB/T24582 Acid Leaching Inductively Coupled Plasma Mass Spectrometry for the Determination of Metal Impurities on the Surface of Polycrystalline Silicon

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